PART |
Description |
Maker |
M5M51008DFP M5M51008DFP-55H M5M51008DFP-70H M5M510 |
1048576位(131072 - Word-8-bit)的CMOS static RAM 1048576位(131072 - Word8位)的CMOS静态RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word8位)的CMOS静态RAM Octal D-Type Transparent Latches With 3-State Outputs 20-SO -40 to 85
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M512R M5M512R88DJ-10 M5M512R88DJ-12 M5M512R88DJ- |
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM From old datasheet system
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation
|
CXK591000TM/YM/M-10LL CXK591000TM/YM/M-70LL CXK591 |
131072-word x 9-bit High Speed CMOS Static RAM 131072-word x 9-bit High Speed CMOS Static RAM 131072字9位高速CMOS静态RAM
|
SONY Vishay Intertechnology, Inc.
|
HN28F101 HN28F101CP-12 HN28F101CP-15 HN28F101CP-20 |
131072-word ?? 8-bit CMOS Flash Memory
|
ETC
|
HN27C101AG |
131072-word 8-bit CMOS UV Erasable and Programmable ROM
|
Hitachi Semiconductor
|
M5M5V108DVP M5M5V108DFP M5M5V108DFP-70H M5M5V108DK |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
RENESAS[Renesas Electronics Corporation]
|
M5M28F101AFP |
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
M5M51008BKV-10VL-I M5M51008BKV-10VLL-I M5M51008BKV |
1048576-bit (131072-word by 8-bit) CMOS static SRAM
|
Mitsubishi Electric Corporation
|
M5M51008CKR-70 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Sem...
|
HN28F101SERIES 28F101 |
131072-word ′ 8-bit CMOS Flash Memory From old datasheet system
|
hitachi
|
CXK5V81000ATM-10LLX CXK5V81000ATM-85LLX |
131072-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|